Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process

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Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.The Si-CMOS layer is temporarily bonded on a Si handle wafer.Another III-V/Si substrate is then bonded to the Si-CMOS containing handle wafer.

Finally, the handle wafer is released to realize the Si-CMOS on III-V/Si apple airpods seattle substrate.For GaN HEMT or LED on Si substrate, additional wafer bonding step is required to replace the fragile Si (111) substrate after high temperature GaN growth with a new Si (001) wafer to improve the robustness of the GaN/Si wafers.Through this substrate replacement step, the bonded wafer pair can survive the subsequent processing steps.

The monolithic integration of Si-CMOS + focusrite rednet r1 III-V devices on a common Si platform enables new generation of systems with more functionality, better energy efficiency, and smaller form factor.